JDS Uniphase 2214-30SLQT Laser Head Beam, KLATTLER-TENCOR

Wavelength:303nm

Beam Quality:M2 < 1.2

Output Power:30mW

Beam Diameter:10μm at 1m

Laser Source:Diode Pumped Solid-State

Operating Temperature Range:-20°C to +50°C

Mechanical Durability:IP67 rated

Lifetime:50,000 hours

    Integrating cutting-edge technology, the JDS Uniphase 2214-30SLQT Laser Head Beam from KLATTLER-TENCOR is engineered to deliver unparalleled precision in semiconductor fabrication environments. This laser diode boasts an ultra-stable wavelength of 300nm, ensuring exceptional accuracy in critical photolithography processes.

    Featuring a power output of 10mW, it is designed to meet the stringent demands of modern semiconductor production, providing a reliable source of light that enhances yield and quality control. With a beam quality M2 < 1.5, this laser ensures minimal divergence, leading to higher resolution and improved pattern transfer.

    Operating within a wide temperature range from -20°C to +45°C, the JDS Uniphase laser is built for durability and reliability in diverse manufacturing conditions. Its ceramic encapsulation not only protects against environmental hazards but also maintains optimal performance over its guaranteed lifetime of ≥ 50,000 hours.

    Comprehensive protection features are integrated to safeguard against overcurrent and thermal stress, ensuring operational safety and minimizing maintenance requirements. The 1A current consumption is optimized for efficient energy use, contributing to sustainable and cost-effective operation.

    This laser head beam from JDS Uniphase KLATTLER-TENCOR is not just a tool for semiconductor manufacturers—it is a solution that promises enhanced productivity, improved efficiency, and reduced downtime, setting new standards in the industry for precision and reliability.